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| MJE243 - NPN, MJE253 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. Features http://onsemi.com * High Collector-Emitter Sustaining Voltage - * High DC Current Gain @ IC = 200 mAdc * * * * hFE = 40-200 = 40-120 Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc High Current Gain Bandwidth Product - fT = 40 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB Pb-Free Packages are Available* VCEO(sus) = 100 Vdc (Min) 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS TO-225 CASE 77 STYLE 1 3 21 MAXIMUM RATINGS III I I IIIIII I IIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII III II I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIII IIII I III IIII III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIII III III III I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII II Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current VCEO VCB VEB IC IB 100 100 7.0 4.0 8.0 10 Vdc Vdc Vdc Adc Adc - Continuous - Peak Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD PD 15 0.12 W mW/_C W mW/_C _C 1.5 0.012 TJ, Tstg -65 to +150 Rating Symbol Value Unit MARKING DIAGRAM YWW JE2x3G Y = Year WW = Work Week JE2x3 = Device Code x = 4 or 5 G = Pb-Free Package THERMAL CHARACTERISTICS Characteristic ORDERING INFORMATION Device MJE243 MJE243G MJE253 MJE253G Package TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) Shipping 500 Units/Box 500 Units/Box 500 Units/Box 500 Units/Box Symbol qJC qJA Max Unit Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 8.34 83.4 _C/W _C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 1 February, 2006 - Rev. 11 Publication Order Number: MJE243/D IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Current-Gain - Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Base-Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) Base-Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc) Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) DC Current Gain (IC = 200 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCE = 100 Vdc, IE = 0, TC = 125_C) Collector-Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0) Characteristic MJE243 - NPN, http://onsemi.com 2 MJE253 - PNP VCEO(sus) Symbol VCE(sat) VBE(sat) VBE(on) ICBO IEBO Cob hFE fT Min 100 40 40 15 - - - - - - - - Max 180 - 1.5 1.8 0.3 0.6 0.1 0.1 0.1 50 - - mAdc mAdc MHz Unit Vdc Vdc Vdc Vdc - pF MJE243 - NPN, 16 TC PD, POWER DISSIPATION (WATTS) MJE253 - PNP 1.6 TA PD, POWER DISSIPATION (WATTS) 12 1.2 8.0 0.8 4.0 0.4 0 20 40 60 80 100 120 140 0 160 T, TEMPERATURE (C) Figure 1. Power Derating VCC +30 V RC RB D1 -4 V SCOPE t, TIME (ns) 1K 500 300 200 100 50 30 20 10 5 3 2 1 0.01 NPN MJE243 PNP MJE253 td VCC = 30 V IC/IB = 10 TJ = 25C tr 25 ms +11 V 0 -9.0 V tr, tf 10 ns DUTY CYCLE = 1.0% 51 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 IC, COLLECTOR CURRENT (AMPS) 3 5 10 Figure 2. Switching Time Test Circuit Figure 3. Turn-On Time r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 D = 0.5 0.2 0.1 0.05 0.02 0.01 0 (SINGLE PULSE) qJC(t) = r(t) qJC qJC = 8.34C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 20 50 100 200 0.05 0.1 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 10 Figure 4. Thermal Response http://onsemi.com 3 MJE243 - NPN, 10 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 0.2 0.1 1.0 ms dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 100 ms 500 ms MJE253 - PNP There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 5.0 ms 0.05 0.02 0.01 1.0 MJE243/MJE253 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area 10K 5K 3K 2K 1K t, TIME (ns) 500 300 200 100 50 30 20 10 0.01 ts VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 200 TJ = 25C C, CAPACITANCE (pF) 100 70 50 30 20 tf NPN MJE243 PNP MJE253 3 5 10 10 1.0 2.0 MJE243 (NPN) MJE253 (PNP) 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 50 70 100 Cob Cib 0.2 0.3 0.5 1 2 0.02 0.03 0.05 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 6. Turn-Off Time Figure 7. Capacitance http://onsemi.com 4 MJE243 - NPN, NPN MJE243 500 300 200 100 70 50 30 20 10 7.0 5.0 0.04 0.06 TJ = 150C 25C -55 C VCE = 1.0 V VCE = 2.0 V MJE253 - PNP PNP MJE253 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.04 0.06 TJ = 150C 25C -55 C VCE = 1.0 V VCE = 2.0 V hFE , DC CURRENT GAIN 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 hFE , DC CURRENT GAIN 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 8. DC Current Gain 1.4 TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 VCE(sat) 0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V IC/IB = 10 5.0 V, VOLTAGE (VOLTS) 1.4 TJ = 25C 1.2 1.0 VBE(sat) @ IC/IB = 10 0.8 0.6 0.4 0.2 VCE(sat) 0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 VBE @ VCE = 1.0 V IC/IB = 10 5.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 9. "On" Voltages V, TEMPERATURE COEFFICIENTS (mV/C) +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 *APPLIES FOR IC/IB hFE/3 V, TEMPERATURE COEFFICIENTS (mV/C) +2.5 +2.5 +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.04 0.06 0.1 0.2 0.4 qVB FOR VBE *qVC FOR VCE(sat) -55 C to 25C 25C to 150C -55 C to 25C 0.6 1.0 2.0 4.0 25C to 150C *APPLIES FOR IC/IB hFE/3 *qVC FOR VCE(sat) 25C to 150C -55 C to 25C 25C to 150C qVB FOR VBE 0.1 -55 C to 25C 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 -2.5 0.04 0.06 IC, COLLECTOR CURRENT (AMP) Figure 10. Temperature Coefficients http://onsemi.com 5 MJE243 - NPN, MJE253 - PNP PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE Z -B- U Q F M C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- -A- 123 H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M M A M B M B M DIM A B C D F G H J K M Q R S U V STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MJE243/D |
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